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| 2SC2412K Elektronische Bauelemente NPN Silicon General Purpose Transistor A suffix of "-C" specifies halogen & lead-free FEATURES n A L 3 Top View SC-59 Dim A Min 2.70 1.30 1.00 0.35 1.70 0.00 0.10 0.20 1.25 2.25 Max 3.10 1.70 1.30 0.50 2.30 0.10 0.26 0.60 1.65 3.00 Low Cob. Cob=2.0pF Compements the 2SA1037K RoHS Compliant Product S n n n 2 B 1 B C D STRUCTURE G n n D G H C J K Expitaxial planar type NPN Silicon Teansistor H J K L 3 Collector Base 2 1 Emitter S All Dimension in mm !Absolute maximum (Ta=25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC Limits 60 50 7 0.15 Unit V V V A Collector power dissipation PC 0.2 W C C Junction temperature Storage temperature Tj Tstg 150 -55~+150 !Electrical characteristics (Ta=25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector-emitter saturation voltage Transition frequency Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) fT Cob Min. 60 50 7 - - 120 - - - Typ. - - - - - - - 180 2 Max. - - - 0.1 0.1 560 0.4 - 3.5 Unit V V V A A - V MHz pF IC=50A IC=1mA IE=50A VCB=60V VEB=7V Conditions VCE=6V, IC=1mA IC/IB=50mA/5mA VCE=12V, IE=-2mA, f=100MHz VCE=12V, IE=0A, f=1MHz Output capacitance hFE values are classified as follows : Item hFE Marking Q 120~270 BQ R 180~390 BR S 270~560 BS http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 3 2SC2412K Elektronische Bauelemente NPN Silicon General Purpose Transistor Typical Characteristics http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 3 2SC2412K Elektronische Bauelemente NPN Silicon General Purpose Transistor http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 3 |
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